Long accepted as a tool for depth profiling thin films and insulating materials, Quadrupole Dynamic SIMS (D-SIMS) is now accepted as the instrument of choice to meet the analytical requirements of 0.18 um linewidth semiconductor implant technology.  Shrinking device geometries require ultra-shallow, high dose implantation of intentional dopants such as boron and arsenic and thinner, highly controlled insulating layers (oxides and oxynitrides).  These critical processes of modern semiconductor device fabrication are ideally suited to the analytical performance of Physical Electronics' ADEPT-1010 instrument.

The ADEPT-1010 employs a unique secondary ion extraction system which provides the highest transmission available on a quadrupole dynamic SIMS. High transmission yields low detection limits offering routine analyses of implant junction depth and dose. These critical factors in implantation can be measured with reproducibility of a few percent, consistent with the needs of the semiconductor industry. In addition, the ADEPT-1010 can be used to monitor the nitrogen content of nitrided oxides with thickness of 5nm and less.

The ultra-high vacuum environment of the ADEPT-1010 allows for depth profiling of low levels of oxygen and carbon in SiGe layers while maintaining excellent depth resolution and low sputter rates. This capability is important to the integrity of these high speed SiGe devices.

The ADEPT-1010 includes a complete software system, SIMetric^tm, for instrument control, data acquisition, and data reduction. The instrument can be run in an automated data acquisition mode without analyst intervention. This mode of operation yields high throughput and reproducible results on batch samples run overnight or over extended time periods.