Carrier Profiling in High Vacuum Using Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Carrier Profiling in High Vacuum 

using SSRM and SCM

In this application note, IMEC shows that spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) can meet the challenges of carrier profiling the state-of-the-art devices entering the sub 10 nm nodes given the right microscopy tool. Their investigation found that Park NX-Hivac is the powerful tool that meets the challenges of ever shrinking devices with its implementation of electrical SPM modes, including SSRM and SCM, in a high vacuum environment.

 

They review the performance of the Park NX-Hivac atomic force microscope (AFM) from Park Systems for SSRM and SCM applications, based on the following three samples:

1. A p-type doped silicon calibration sample (IMEC CS08-SiB): a sample consisting of various Boron doped epitaxial silicon layers (~600 nm) with known doping concentration.

2. An n-type doped silicon calibration sample (IMEC CS01-SiAs): a sample consisting of various arsenic doped epitaxial silicon layers with known doping concentration (Figure 5). This sample additionally has a p-type doped layer embedded in the stack.

3. Buried oxide sample: a 0.5 nm oxide layer sandwiched in between a highly doped Si and a poly Si layer (Figure 2). These samples are measured on the Park NX-Hivac AFM system, operating in vacuum conditions (~5e-5 mbar) using IMEC Full Diamond probes.

Go to ‘request application note’  and download the full application note.