High-aspect-ratio (HAR) microstructures are characterized by vertical dimensions that are significantly larger than their lateral dimensions. This aspect makes their fabrication and characterization challenging, being essential in semiconductor and advanced packaging applications.
At high aspect ratios, the 3D optical profilometers can access deep features, but preserving measurement fidelity becomes critical.
In these cases, lower-magnification objectives with lower numerical aperture (NA) improve optical access and signal robustness in deep structures, enabling more reliable characterization of trench patterns. Compared to high-NA objectives, this results in a lower percentage of blocked angles, leading to greater light intensity and improved imaging quality for measuring deep structures.
Industries such as semiconductor manufacturing and MEMS often require measuring high-aspectratio features, such as through-silicon vias (TSVs), deep trenches, and micro-holes, which demand accurate capture of extreme depth-to-width ratios.
At Sensofar, we offer solutions for these complex geometries, enabling consistent characterization of high-aspect-ratio microstructures, as demonstrated in the following examples.
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Please click on ‘Request Application Note’ and download the application note ‘Metrology for high-aspect-ratio microstructures’.