Atomic Layer Deposition


Atomic Layer Deposition (ALD) is a thin-film deposition technique that uses a sequential gas phase chemical process. ALD is a subclass of Chemical Vapour Deposition (CVD). With ALD, a thin film is slowly deposited with the repeated exposure to separate precursors. Most ALD reactions use two chemicals called precursors. These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. The precursors are pulsed and purged onto the substrate (material) one at a time. One precursor is introduced, then purged, and the second precursor is introduced. This process builds an atomic level coating, one layer at a time. This process can be repeated as many times as necessary, in order to achieve the desired thickness, or specific surface properties.

ST Instruments offers a range of R&D scale and commercial systems from Forge Nano to perform ALD on powders & particles, objects & high surface area substrates, wafers and semiconductors.

Atomic Layer Deposition for Powders

Atomic Layer Deposition

R&D Scale Systems

♦   Pandora | Benchtop R&D Systems

♦   Prometheus | Advanced R&D / Pilot Scale


Commercial Scale Systems

♦   Lithos | Medium to Large Scale Batch

♦   Morpheus | High Throughput Semi-Continuous

♦   CIRCE | High Throughput Continuous

Atomic Layer Deposition for Objects

Atomic Layer Deposition


R&D Scale Systems

♦   Athena | R&D Scale Object Coating


Commercial Scale Systems

♦   Helios | High Throughput Object Coating

Atomic Layer Deposition for Wafers


R&D Scale Systems

♦   Theia | R&D Scale Wafer Coating


Commercial Scale Systems

♦   Apollo | High Throughput Rapid Wafer Coating

How does Atomic Layer Deposition work?

Atomic Layer Deposition (ALD) is a thin-film deposition technique that creates highly controlled and uniform films on substrates at the atomic level. ALD achieves this by sequentially introducing gaseous precursors to the substrate surface in a cyclical manner. Here’s how ALD works:


Substrate Preparation: The process begins with preparing the substrate surface. It’s essential that the substrate is clean and free of contaminants to ensure proper film growth.


Pulse of Precursor 1: The first precursor gas is introduced into the reactor, and a pulse of this gas is directed towards the substrate. The precursor molecules adsorb onto the substrate’s surface, forming a monolayer of the precursor.


Purge or Inert Gas Pulse: After the precursor pulse, the reactor is purged with an inert gas, often nitrogen or argon. This step removes any excess precursor and byproducts, ensuring a clean environment for the subsequent step.


Pulse of Precursor 2: The second precursor gas is introduced into the reactor, and a pulse of this gas is directed towards the substrate. This precursor reacts with the adsorbed first precursor molecules, forming a chemical reaction that produces a thin layer of the desired material on the substrate.


Purge or Inert Gas Pulse: Similar to the first purge step, the reactor is purged with an inert gas to remove any excess precursor and byproducts.


Cyclic Process: Steps 2 to 5 are repeated in a cycle for a predetermined number of cycles. Each cycle adds a controlled atomic layer of the material to the growing film. ALD’s self-limiting nature ensures uniform and precise film thickness since the surface saturation prevents excessive layer growth.


Film Growth Control: The final film thickness is controlled by the number of cycles and the duration of precursor pulses. This allows for precise control over the film thickness down to the atomic level.


Film Properties: The properties of the deposited film are influenced by the choice of precursor materials, temperature, and reactor conditions. ALD can create thin films with tailored properties like composition, thickness, density, and crystallinity.


ALD is used in various applications, including microelectronics, energy storage, optical coatings, and more, due to its ability to produce high-quality, conformal, and controlled thin films with atomic precision.

Atomic Layer Deposition

Why would you use Atomic Layer Deposition?

Atomic Layer Deposition (ALD) offers distinct advantages that make it a preferred choice for various applications:


Precise Thickness Control: ALD allows accurate control over film thickness at the atomic level, ensuring uniformity across complex structures. This level of control is vital for applications requiring specific coating thicknesses.


Conformal Coating: ALD’s self-limiting nature ensures that coatings conform to complex geometries, enabling uniform deposition on three-dimensional and high-aspect-ratio structures.


Uniformity: ALD produces highly uniform films even on intricate surfaces, providing consistent material properties across the substrate. This is essential for reliable device performance.


Highly Controlled Deposition: The cyclic process of introducing precursors ensures controlled growth of each atomic layer, reducing defects and enabling accurate control over composition.


High-Quality Films: ALD produces high-quality, dense, and pinhole-free films with excellent adhesion to substrates, enhancing material properties and device performance.


Tailored Properties: ALD enables the creation of films with tailored properties, including composition, thickness, and crystallinity, making it ideal for engineering specific functionalities.


Multifunctional Films: By alternating precursor types, ALD can create multilayer structures with diverse properties, catering to multifunctional requirements within a single coating.


Sensitive Materials: ALD operates at lower temperatures compared to some other deposition techniques, making it suitable for depositing films on heat-sensitive substrates like polymers and biological materials.


Energy and Environment: ALD is employed in energy storage, catalysis, and fuel cell applications due to its ability to create precise and controlled coatings that optimize material performance.


Microelectronics and Nanotechnology: ALD is essential for producing semiconductor devices, integrated circuits, and nanoscale components, where precise control over material properties is critical for functionality and miniaturization.


In essence, ALD’s ability to provide atomic-level control, conformal coatings, uniformity, and tailored material properties makes it a valuable technique for applications spanning microelectronics, energy storage, optics, catalysis, and beyond.

Fig 1: Multilayers
Fig 2: Nano-Islands

Applications for Atomic Layer Deposition

Semiconductor Manufacturing
In semiconductor fabrication, ALD is employed to create critical thin films with atomic precision. For instance, ALD is used to deposit gate dielectrics with specific electrical properties, ensuring efficient transistor operation. High-k dielectrics, like hafnium oxide (HfO2), enable continued miniaturization by replacing traditional materials. ALD-deposited metal gate electrodes improve conductivity and compatibility with surrounding materials. These precise layers are essential for modern microelectronics, ensuring reliable and efficient device performance.

Barrier Coatings
ALD is pivotal in creating barrier coatings that shield sensitive materials from environmental factors. In microelectronics, moisture and oxygen can degrade device performance. ALD-deposited thin films, such as aluminum oxide (Al2O3) or tantalum nitride (TaN), serve as effective barriers, preventing unwanted species from penetrating device components. These coatings preserve device integrity and lifespan, particularly in applications where moisture or contaminants are a concern.

Optical Coatings
ALD revolutionizes optical coatings by offering precise control over film thickness and composition. Anti-reflective coatings enhance light transmission through lenses, eyeglasses, and displays by minimizing reflections. Dielectric mirrors consist of alternating ALD-deposited layers with controlled thicknesses, enabling precise control over reflectivity and transmission for specific wavelengths. Interference filters use similar principles to selectively transmit or reflect particular wavelengths, making ALD crucial in optics and photonics.

Energy Storage
ALD contributes to energy storage advancements by enhancing electrode performance in batteries and supercapacitors. ALD-deposited coatings on electrode materials improve their surface properties, optimizing charge/discharge efficiency and energy density. For instance, ALD can coat lithium-ion battery cathodes with materials like lithium iron phosphate (LiFePO4), enhancing their stability and capacity retention over cycles. Such improvements are vital for extending battery lifespan and energy storage capabilities.

ALD is increasingly used in catalysis to create precisely tailored catalysts. By depositing catalytic materials layer by layer, ALD enables control over active site density and surface area, leading to enhanced catalytic efficiency. This application is crucial for optimizing reactions in industries ranging from petrochemicals to environmental remediation. ALD-derived catalysts offer tunable properties, improving reaction selectivity, efficiency, and sustainability.