Fluorine-Based Etching with the nanoETCH Benchtop RIE System

Fluorine-Based Etching with the nanoETCH Benchtop RIE System

This application note showcases how the compact nanoETCH system enables precise fluorine-chemistry etching of h-BN, SiO₂, and Si using gases such as SF₆ and CHF₃. It highlights both ultra-low-power Soft Etching for delicate materials and high-rate bulk etching for more robust processes. Real examples demonstrate capabilities ranging from atomic-layer removal of h-BN sidewalls to fast silicon etching and highly controlled SiO₂ thinning. The note provides a clear overview of how nanoETCH combines accuracy, flexibility, and ease of use for advanced materials research and device fabrication.