[vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column width=”3/4″][vc_column_text]

Carrier Profiling in High Vacuum 

using SSRM and SCM

[/vc_column_text][/vc_column][vc_column width=”1/4″][button size=”large” style=”white” target=”_self” hover_type=”default” font_weight=”500″ text_align=”center” text=”Request application note” link=”https://www.stinstruments.com/applications/microelectronics/carrier-profiling-in-high-vacuum/request-application-note-carrier-profiling-in-high-vacuum” background_color=”#eb6209″ border_radius=”6″][button size=”small” style=”white” target=”_self” hover_type=”default” font_weight=”500″ text_align=”center” text=”Product” link=”https://www.stinstruments.com/surface-measurements/atomic-force-microscopy/nx-hivac/” background_color=”#eb6209″ border_radius=”6″][button size=”small” style=”white” target=”_self” hover_type=”default” font_weight=”500″ text_align=”center” text=”Brochure” link=”https://www.stinstruments.com/surface-measurements/atomic-force-microscopy/nx-hivac/request-brochure-nxhivac/” background_color=”#eb6209″ border_radius=”6″][/vc_column][/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_column_text]In this application note, IMEC shows that spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) can meet the challenges of carrier profiling the state-of-the-art devices entering the sub 10 nm nodes given the right microscopy tool. Their investigation found that Park NX-Hivac is the powerful tool that meets the challenges of ever shrinking devices with its implementation of electrical SPM modes, including SSRM and SCM, in a high vacuum environment.

They review the performance of the Park NX-Hivac atomic force microscope (AFM) from Park Systems for SSRM and SCM applications, based on the following three samples:

1. A p-type doped silicon calibration sample (IMEC CS08-SiB): a sample consisting of various Boron doped epitaxial silicon layers (~600 nm) with known doping concentration.

2. An n-type doped silicon calibration sample (IMEC CS01-SiAs): a sample consisting of various arsenic doped epitaxial silicon layers with known doping concentration (Figure 5). This sample additionally has a p-type doped layer embedded in the stack.

3. Buried oxide sample: a 0.5 nm oxide layer sandwiched in between a highly doped Si and a poly Si layer (Figure 2). These samples are measured on the Park NX-Hivac AFM system, operating in vacuum conditions (~5e-5 mbar) using IMEC Full Diamond probes.[/vc_column_text][/vc_column][/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_single_image image=”12068″ img_size=”large” alignment=”center” qode_css_animation=””][/vc_column][/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_column_text]Go to ‘request application note’  and download the full application note.[/vc_column_text][/vc_column][/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_column_text][/vc_column_text][/vc_column][/vc_row]